Photonic materials

Patent Application 04-D-016-Fr/2005 Procédé de croissance d’ilots photoluminescents à partir de l’oxy-nitrure de gallium amorphe en couches minces, O. Monnereau, L. Tortet, R. Notonier, A. Tonetto, C.E.A. Grigorescu, H.J. Trodahl, F. Budde

Amorphous and nanocrystalline GaN

Absorption and photoluminescence for nc- GaN and a-GaN:O

Applications: telecommunications, data transfer, and computing will be greatly enhanced through all-optical processing in which bits of information, encoded in the form of a photon number distribution, can be transmitted and processed without conversion to and from electrical signals.