Photonic materials

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Patent Application 04-D-016-Fr/2005 Procédé de croissance d’ilots photoluminescents à partir de l’oxy-nitrure de gallium amorphe en couches minces, O. Monnereau, L. Tortet, R. Notonier, A. Tonetto, C.E.A. Grigorescu, H.J. Trodahl, F. Budde

 

 


Amorphous and nanocrystalline GaN

Amorphous and nanocrystalline GaN

Absorption and photoluminescence for nc- GaN and a-GaN:O

Absorption and photoluminescence for nc- GaN and a-GaN:O


Applications: telecommunications, data transfer, and computing will be greatly enhanced through all-optical processing in which bits of information, encoded in the form of a photon number distribution, can be transmitted and processed without conversion to and from electrical signals.